Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
US7501293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2003 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Feb 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.