Method of fabricating a reflective electrode for a semiconductor light emitting device

US7501295B2 · kind B2 · utility

Assignee

• Philips Lumileds Lighting Company LLC · US

Inventor

• Ling Zhou · San Jose, US

Key dates

• Filing date: May 25, 2006
• Grant date: Mar 10, 2009
• Expiry date: Jan 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in electrical contact with the active layer. The process involves depositing an intermediate layer of electrically conductive material on the cladding layer and causing at least a portion of the electrically conductive material to diffuse into the cladding layer. The process further involves depositing a reflective layer on the intermediate layer, the reflective layer being electrically conductive and in electrical contact with the intermediate layer.