Semiconductor device having fin transistor and planar transistor and associated methods of manufacture
US7501674B2 · kind B2 · utility
25Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2005 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
Disclosed is a fin transistor and a planar transistor and a method of forming the same. The fin transistor and the planar transistor are formed to have gate electrodes with similar thicknesses by selectively recessing a semiconductor substrate in a planar region where the planar transistor is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.