Thin film piezoelectric resonator and manufacturing process thereof
US7501739B2 · kind B2 · utility
4Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2005 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Mar 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film piezoelectric resonator includes a substrate having a cavity, and a resonance portion located on the substrate and right above the cavity. The resonance portion includes a lower electrode layer located at a side of the cavity, an upper electrode layer opposite to the lower electrode layer, and a piezoelectric thin film located between the upper electrode layer and the lower electrode layer. A side of the piezoelectric thin film and a side of the lower electrode layer are located in a common plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.