Emitter electrodes formed of chemical vapor deposition silicon carbide
US7501765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2004 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Oct 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01T23/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ionizer emitter electrode is ideally formed of or at least partially coated with a carbide material, wherein the carbide material is selected from the group consisting of germanium carbide, boron carbide, silicon carbide and silicon-germanium carbide. Alternatively, a corona-producing ionizer emitter electrode is substantially formed of silicon carbide. Alternatively, a corona-producing ionizer emitter electrode is formed of an electrically conductive metal base that is at least partially coated with silicon carbide. Alternatively, a corona-producing ionizer emitter electrode ionizes gas when high voltage is applied thereto, and the emitter electrode is formed substantially of silicon carbide and has a resistivity of less than or equal to about one hundred ohms-centimeter (100 Ω-cm).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.