Antireflective coating for semiconductor devices and method for the same
US7502155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2005 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Sep 26, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/042
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.