Method and system for forming a film of material using plasmon assisted chemical reactions
US7504136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Jan 8, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/483
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a film of material using chemical vapor deposition. The method includes providing a substrate comprising a pattern of at least one metallic nanostructure, which is made of a selected material. The method includes determining a plasmon resonant frequency of the selected material of the nanostructure and exciting a portion of the selected material using an electromagnetic source having a predetermined frequency at the plasmon resonant frequency to cause an increase in thermal energy of the selected material. The method includes applying one or more chemical precursors overlying the substrate including the selected material excited at the plasmon resonant frequency and causing selective deposition of a film overlying at least the portion of the selected material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.