Suppression of chemical reactivity on semiconductor surfaces
US7504155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2004 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | May 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to compositions, kits and methods of providing improved semiconductor surfaces free of dangling bonds and free of strained bonds. One method provides for preventing interfacial reactions between a semiconductor surface and metal or dielectric comprising the steps of preparing a passivated semiconductor surface using a valence-mending agent and depositing a layer of metal or dielectric on the valence-mended semiconductor surface. As further described, a semiconductor surface free of interfacial reactions between the surface and a second molecular species may include a semiconductor surface with one atomic layer of valence-mending atoms, wherein valence mending occurs after introducing the semiconductor surface to a passivating agent. The present invention also includes a kit for preventing interfacial reactions from occurring on a semiconductor surface comprising a passivating agent and an instructional manual.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.