High-voltage field-effect transistor

US7504692B2 · kind B2 · utility

Assignee

• ATMEL Germany GmbH · DE

Inventors

• Volker Dudek · Ditzingen, DE
• Michael Graf · Leutenbach, DE
• Stefan Schwantes · Heilbronn, DE

Key dates

• Filing date: Sep 11, 2006
• Grant date: Mar 17, 2009
• Expiry date: Dec 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/832
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

High-voltage field-effect transistor is provided that includes a drain terminal, a source terminal, a body terminal, and a gate terminal. A gate oxide and a gate electrode, adjacent to the gate oxide, is connected to the gate terminal. A drain semiconductor region of a first conductivity type is connected to the drain terminal. A source semiconductor region of a first conductivity type is connected to the source terminal. A body terminal semiconductor region of a second conductivity type is connected to the body terminal. A body semiconductor region of the second conductivity type, is partially adjacent to the gate oxide to form a channel and is adjacent to the body terminal semiconductor region. A drift semiconductor region of the first conductivity type is adjacent to the drain semiconductor region and the body semiconductor region, wherein in the drift semiconductor region, a potential barrier is formed in a region distanced from the body semiconductor region.