High-frequency power amplifier and communication device
US7504887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2007 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Jul 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F1/30
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.