Current detection for microelectronic devices using source-switched sensors
US7506184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2006 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Sep 5, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F1/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for current detection for microelectronic devices using source-switched sensors. An embodiment of a current detector for a microelectronic device includes a first voltage sensor and a second voltage sensor. The first voltage sensor is to measure a first voltage of the microelectronic device during a first time period and a second voltage of the microelectronic device during a second time period. The second voltage sensor is to measure the second voltage during the first time period and the first voltage during the second time period. A voltage value is equal to the sum of the first voltage measured by the first sensor plus the first voltage measured by the second sensor, minus the sum of the second voltage measured by the first sensor plus the second voltage measured by the second sensor. Other embodiments are also described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.