Efficient gallium thin film electroplating methods and chemistries
US7507321B2 · kind B2 · utility
15Cited by
13References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2006 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Mar 7, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.