Patent · US Expired

Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base material, solar cell and photo detection element

US7507357B2 · kind B2 · utility

6Cited by
1References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 2, 2003
Grant dateMar 24, 2009
Priority date
Expiry dateJul 14, 2025

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A transparent oxide electrode film is provided to have crystalline indium oxide as its main component, in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resitivity of the transparent oxide electrode film is 5.7×10−4 Ωcm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.