Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base material, solar cell and photo detection element
US7507357B2 · kind B2 · utility
6Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Oct 2, 2003 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Jul 14, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A transparent oxide electrode film is provided to have crystalline indium oxide as its main component, in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resitivity of the transparent oxide electrode film is 5.7×10−4 Ωcm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.