Contact portion and manufacturing method thereof, thin film transistor array panel and manufacturing method thereof
US7507594B2 · kind B2 · utility
5Cited by
3References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Mar 1, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13629
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a contact portion is provided, which includes: forming a first signal line on a substrate (110), forming a insulating layer (140) covering the first signal line and having a contact hole (182, 185) exposing the first signal line; forming a contact layer (700) on the exposed surface of the first signal through the contact hole; and forming a second signal line (82, 190) connected to the first signal line via the contact layer. Wherein the first signal line is made of Al or Al alloy, and the second signal line is made of ITO or IZO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.