Ambipolar organic thin-film field-effect transistor and making method
US7507613B2 · kind B2 · utility
6Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Aug 1, 2007 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Aug 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/311
Abstract
In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.