Low-capacity vertical diode
US7507620B2 · kind B2 · utility
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11References
36Claims
0Family size
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Key dates
| Filing date | Jun 23, 2005 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Sep 3, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A vertical diode of low capacitance formed in a front surface of a semiconductor substrate, including a first area protruding from the substrate surface including at least one doped semiconductor layer of a conductivity type opposite to that of the substrate, the upper surface of the semiconductor layer supporting a first welding ball. The diode includes a second area including on the substrate a thick conductive track supporting at least two second welding balls, said first and second welding balls defining a plane parallel to the substrate plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.