Process for producing Schottky junction type semiconductor device

US7507650B2 · kind B2 · utility

Assignee

• CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY · JP

Inventors

• Tomonori Nakamura · Chino, JP
• Hidekazu Tsuchida · Yokosuka, JP
• Toshiyuki Miyanagi · Yokosuka, JP

Key dates

• Filing date: Mar 25, 2005
• Grant date: Mar 24, 2009
• Expiry date: Oct 22, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A process for producing a Schottky junction type semiconductor device includes the steps of forming a Schottky electrode on a surface of a silicon carbide epitaxial layer, wherein a Schottky electrode made of molybdenum, tungsten, or an alloy thereof is formed on the surface of the silicon carbide epitaxial layer and is subjected to heat treatment so as to induce an alloying reaction at an interface of the silicon carbide epitaxial layer and the Schottky electrode, thereby forming an alloy layer at the interface, whereby the height of a Schottky barrier is controlled while maintaining an n-factor at a nearly constant low value.