Semiconductor apparatus and method of fabricating the apparatus
US7507658B2 · kind B2 · utility
4Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2005 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Oct 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A via hole is formed by a first step of forming an opening in a resin insulating film by laser radiation, a second step of forming an opening in said resin insulating film by dry etching and a third step of performing reverse sputtering in a plasma environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.