Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
US7508003B2 · kind B2 · utility
5Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2006 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Dec 10, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.