Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
US7508034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2003 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Sep 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.