Photodetector
US7508046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2007 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | May 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1248
Abstract
A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.