Semiconductor laser diode and method of manufacturing the same
US7508857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2005 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Dec 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34366
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.