Light emitting diode structures
US7509012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2004 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Sep 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one aspect of the present invention, a light emitting diode (LED) structure including an active core layer and at least one substrate layer having a first refractive index, comprises a 2-dimensional photonic quasicrystal in the structure, the photonic quasicrystal comprising an array of regions having a second refractive index, the array exhibiting long range order but short range disorder. The long range order is associated with diffractive properties of the structure and gives rise to uniform-far field diffraction patterns from the LED. The present invention enjoys the benefit of improved light extraction from LEDs without undesirable far field illumination patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.