Time continuous ion-ion plasma
US7510666B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jun 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/477
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.