Method for producing a luminescence diode chip

US7510890B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Hubert Ott · Bad Abbach, DE
• Stefan Grötsch · Regensburg, DE
• Herbert Brunner · Sinzing, DE

Key dates

• Filing date: Nov 1, 2004
• Grant date: Mar 31, 2009
• Expiry date: Apr 10, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8515

Abstract

A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.