Method of making an encapsulated plasma sensitive device
US7510913B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Dec 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.