Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device
US7510935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jun 12, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
In an embodiment, a method of manufacturing a charge-trapping dielectric and a silicon-oxide-nitride-oxide-silicon (SONOS)-type non-volatile semiconductor device includes forming the charge-trapping dielectric, and a first oxide layer including silicon oxide. A silicon nitride layer including silicon-rich nitride is formed by a cyclic chemical vapor deposition (CVD) process using a silicon source material and a nitrogen source gas. A second oxide layer is formed on the silicon nitride layer. Hence, the charge-trapping dielectric having good erase characteristics is formed. In the SONOS-type non-volatile semiconductor device including the charge-trapping dielectric, a data erase process may be stably performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.