Method for filling of nanoscale holes and trenches and for planarizing of a wafer surface
US7510946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Feb 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing method for use in the fabrication of fabrication of nanoscale electronic, optical, magnetic, biological, and fluidic devices and structures, for filling nanoscale holes and trenches, for planarizing a wafer surface, or for achieving both filling and planarizing of a wafer surface simultaneously. The method has the initial step of depositing a layer of a meltable material on a wafer surface. The material is then pressed using a transparent mold while shining a light pulse through the transparent mold to melt the deposited layer of meltable material. A flow of the molten layer material fills the holes and trenches, and conforms to surface features on the transparent mold. The transparent mold is subsequently removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.