Sputtering target, optical thin film and manufacturing method thereof using the sputtering target, and optical recording medium
US7510990B2 · kind B2 · utility
2Cited by
3References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 7, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Feb 13, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/24316
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sputtering target contains Si and C as its major components and includes a texture in which a Si phase continuously exists in a net shape in gaps among SiC crystal grains. An average diameter of the Si phase is controlled to 1000 nm or less. The sputtering target is sputtered in an oxygen-containing gas, thereby depositing an optical thin film containing Si and O as its major components, and a third element other than the major components, a total amount of the third element being within a range from 10 to 2000 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.