Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US7511311B2 · kind B2 · utility
76Cited by
14References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2003 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jan 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.