Thin film transistor
US7511343B2 · kind B2 · utility
107Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Oct 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor is disclosed comprising a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.