Field effect transistor
US7511344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2007 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Mar 21, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed are embodiments of a field effect transistor that incorporates an elongated semiconductor body with a spiral-shaped center channel region wrapped one or more times around a gate and with ends that extend outward from the center region in opposite directions away from the gate. Source/drain regions are formed in the end regions by either doping the end regions or by biasing a back gate to impart a preselected Fermi potential on the end regions. This disclosed structure allows the transistor size to be scaled without decreasing the effective channel length to the point where deleterious short-channel effects are exhibited. It further allows the transistor size to be scaled while also allowing the effective channel length to be selectively increased (e.g., by increasing the number of times the channel wraps around the gate). Also, disclosed are embodiments of an associated method of forming the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.