Methods and apparatus to test power transistors
US7511527B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2008 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jan 29, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and apparatus to test power transistors of integrated circuits on a wafer are disclosed. An example method comprises measuring a drain-source on resistance of a first transistor, measuring a drain-source on resistance of a second transistor, computing a scaling ratio between the transistors based on the drain-source on resistances of the transistors, measuring a first current indicative of an over-current condition of the first transistor, and computing a second current of the second transistor based on the current of the second transistor and the scaling ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.