Active matrix liquid crystal display device

US7511780B2 · kind B2 · utility

Assignee

• Epson Imaging Devices Corporation · JP

Inventors

• Tomohide Onogi · Shiojiri, JP
• Yasuo Segawa · Adumino, JP

Key dates

• Filing date: Oct 24, 2007
• Grant date: Mar 31, 2009
• Expiry date: Oct 30, 2027

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F1/134372
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An active matrix liquid crystal display device includes a pixel transistor, a wiring layer, a first insulating layer, a lower electrode layer, a second insulating layer, and an upper electrode layer. The wiring layer is connected to the pixel transistor. The first insulating layer is provided on the pixel transistor and the wiring layer. The lower electrode layer is provided on the first insulating layer and used as one of a common electrode layer and a pixel electrode layer. The second insulating layer is provided on the lower electrode layer. The upper electrode layer is provided on the second insulating layer and used as the other of the common electrode layer and the pixel electrode layer. The thickness t of the second insulating layer satisfies t<[(ε0ε/W)×{(0.025381/P)2/6}]/(100×10−9) and t>[(ε0ε/W)×{(0.025381/P)2/6}×k×ρON]/τON, where a display pixel has a substantially square shape and is composed of a plurality of sub pixels, a pitch at which the display pixels are arranged vertically and a pitch at which the display pixel are arranged horizontally are respectively P per 25.381 mm, the channel width of the pixel transistor is W, the on resistance per unit channel width of th…