Method and apparatus for dynamic plasma treatment of bipolar ESC system
US7511936B2 · kind B2 · utility
0Cited by
22References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jun 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure generally relates to a method for method for plasma etching a substrate in a plasma reactor comprising positioning the substrate on an electrostatic chuck inside the plasma reactor; supplying a DC voltage to the chuck, the DC voltage forming an electrostatic charge buildup on the substrate; plasma etching the substrate; disconnecting the DC voltage to the chuck; and counteracting the electrostatic charge buildup on the substrate by discharging a varying RF signal within the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.