Semiconductor memory device
US7511986B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2007 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Sep 16, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The possibility of the loss of information stored in a memory cell which is caused by repeating the reading action on the same memory cell comprising a variable resistance element and a select transistor can significantly be reduced. A voltage applying circuit for selecting one or more of the memory cells from a memory cell array and applying voltages to the word lines, bit lines, and source lines for programming, erasing, and reading information applies a voltage between the bit line and the source line connected to the selected memory cell so that the voltage applied between the two ports of the variable resistance element in the selected memory cell during the reading action is equal in the polarity to one of the voltages applied between the two ports of the variable resistance element for the programming action and the erasing action respectively whichever is greater in the absolute value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.