Plasma processing method and apparatus
US7513214B2 · kind B2 · utility
136Cited by
20References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2004 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Dec 11, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/505
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter-electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.