Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)
US7514160B2 · kind B2 · utility
46Cited by
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6Claims
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Key dates
| Filing date | Feb 12, 2007 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Apr 9, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.