CMOS power sensor
US7514333B2 · kind B2 · utility
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1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Apr 27, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R15/202
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the current coil is connected to a voltage source, and the other end of the current coil is connected to a load. The high voltage device circuit is connected to the voltage source. The Hall device is connected to the high voltage device circuit and induces a Hall voltage in response to the magnetic field generated by the current coil.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.