Semiconductor optical device and manufacturing method thereof
US7514349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Aug 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.