Adhering layers to metals with dielectric adhesive layers
US7514359B2 · kind B2 · utility
0Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | May 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.