Method for manufacturing flat substrates
US7514374B2 · kind B2 · utility
1Cited by
13References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Nov 3, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.