80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio
US7514708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2003 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | May 6, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/888
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyimide passivation and planarization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substrate 100 that serves as a foundation for bottom contact layers 102 and a polyimide 700 coating. An ohmic metal contact 300 and emitter metal contact 400 protrude above the polyimide 700 coating exposing the ohmic metal contact 300 and emitter metal contact 400. The contacts are capped with an etch-resistant coating 710 thus allowing for the polyimide etch, and other etching processes without adversely affecting the contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.