Organo-silsesquioxane polymers for forming low-k dielectrics
US7514709B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Apr 13, 2004 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Feb 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A low dielectric constant polymer, comprising monomeric units derived from a compound having the general formula I (R1—R2)n—Si—(X1)4-n, wherein each X1 is independently selected from hydrogen and inorganic leaving groups, R2 is an optional group and comprises an alkylene having 1 to 6 carbon atoms or an arylene, R1 is a polycycloalkyl group and n is an integer 1 to 3. The polymer has excellent electrical and mechanical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.