Bottom gate thin film transistors
US7514710B2 · kind B2 · utility
6Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Aug 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/488
Abstract
A transistor is provided comprising: a substrate; a gate electrode; a semiconducting material not located between the substrate and the gate electrode; a source electrode in contact with the semiconducting material; a drain electrode in contact with the semiconducting material; and a dielectric material in contact with the gate electrode and the semiconducting material; wherein the semiconducting material comprises: 1-99.9% by weight of a polymer having a dielectric constant at 1 kHz of greater than 3.3; 0.1-99% by weight of a functionalized pentacene compound as described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.