In-pixel analog memory with non-destructive read sense circuit for high dynamic range global shutter pixel operation
US7514716B2 · kind B2 · utility
18Cited by
15References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jan 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/57
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging device having pixels that store charge from a photosensor under at least one storage gate during a sampling period. A driver used to operate the at least one storage gate, senses how much charge was transferred to the storage gate and sets a flag in an analog memory (e.g., stores a voltage in a floating diffusion region) based on the amount of sensed charge. The sensed charge is used to determine an integration time for the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.