Nanophotovoltaic devices
US7514725B2 · kind B2 · utility
434Cited by
21References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2004 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Nov 30, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.