Solid-state imaging device and method of driving the same
US7514729B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Oct 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation unit formed in the N-type impurity region so as to contact with the photo-electric conversion unit, and temporarily accumulating charge generated in the photo-electric conversion unit, a charge hold region (barrier unit) formed in the N-type impurity region so as to contact with the charge accumulation unit, and allowing the charge accumulation unit to accumulate the charge, and a charge accumulating electrode provided to the charge accumulation unit. The charge accumulation unit and the charge hold region are formed to be N−-type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.