Method for forming high-resolution pattern having desired thickness or high aspect ratio using deep ablation
US7517467B2 · kind B2 · utility
3Cited by
1References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/1135
Abstract
Disclosed herein is a method of forming a pattern, comprising: attaching a single-layer or multi-layer sacrificial film made of a semi-solid or solid material on part or all of the surface of a substrate; irradiating the sacrificial film with a focusable energy beam such as a laser beam to form a region to be charged with a functional material; charging the functional material into the formed region using a method such as an inkjet; drying the functional material; and removing the sacrificial film, thus obtaining the desired pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.