Process for producing nanostructure of mixed film of Al, Si, and/or Ge
US7517554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Oct 7, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.